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 QSE213C/QSE214C Plastic Silicon Infrared Phototransistor
March 2006
QSE213C/QSE214C Plastic Silicon Infrared Phototransistor
Features
NPN Silicon Phototransistor Package Type: Sidelooker Medium Reception Angle, 50 Daylight Filter Clean Epoxy Package Matching Emitter: QEE213
Description
The QSE213C/QSE214C is a silicon phototransistor encapsulated in a medium angle, infrared transparent, clear thin plastic sidelooker package.
Package Dimensions
0.060 (1.50) 0.174 (4.44)
R 0.030 (0.76) 0.047 (1.20)
0.224 (5.71)
0.177 (4.51)
0.030 (0.76) 0.5 (12.7) MIN
EMITTER 0.020 (0.51) SQ. (2X) 0.100 (2.54)
Schematic
Collector
Notes: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of .010 (.25) on all non-nominal dimensions unless otherwise specified.
Emitter
(c)2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
QSE213C/QSE214C Rev. 1.0.0
QSE213C/QSE214C Plastic Silicon Infrared Phototransistor
Absolute Maximum Ratings (TA = 25C unless otherwise specified)
Symbol
TOPR TSTG TSOL-I TSOL-F VCE VEC PD Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation(1)
Parameter
Rating
-40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 30 5 100
Unit
C C C C V V mW
Electrical/Optical Characteristics (TA =25C unless otherwise specified)
Symbol Parameter PS Q ID BVCEO BVECO IC(ON) Peak Sensitivity Reception Angle Collector Emitter Dark Current Collector Emitter Breakdown Emitter Collector Breakdown On-State Collector Current VCE = 10 V, Ee = 0 IC = 1mA IE = 100A Ee = 0.5 mW/cm2, VCE = 5V VCE = Ee = IC = 0.1mA(5) 5 V(5), (QSE213C) (QSE214C) 0.5mW/cm2, Test Conditions Min -- -- -- 30 5 0.2 1.00 -- -- -- Typ 880 25 -- -- -- -- -- -- 8 8 Max -- -- 100 -- -- 1.50 -- 0.4 -- -- V s Units nM nA V V mA
VCE(SAT) Saturation Voltage tr tf Rise Time Fall Time
VCC = 5V, RL = 100, IC = 1mA
Notes: 1. Derate power dissipation linearly 1.33 mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6 mm) minimum from housing. 5. = 950 nm GaAs.
2 QSE213C/QSE214C Rev. 1.0.0
www.fairchildsemi.com
QSE213C/QSE214C Plastic Silicon Infrared Phototransistor
Typical Performance Curves
Fig. 1 Dark Current vs. Collector Emitter Voltage
101
Fig. 2 Radiation Diagram
ID - DARK CURRENT (mA)
100 120 130 10-1 140 150 10-2 160 170 10-3 0 10 20 30 40 50 60 180 1.0 0.8 0.6
110
100
90
80
70 60 50 40 30 20 10 0
0.4
0.2
0
0.2
0.4
0.6
0.8
1.0
VCE - COLLECTOR EMITTER VOLTAGE (V)
Fig. 3 Light Current vs. Ambient Temperature
IL - NORMALIZED LIGHT CURRENT IL - NORMALIZED LIGHT CURRENT
10 Normalized to: VCE = 5 V Ie = 0.5 mW/cm2 TA = 25C
Fig. 4 Light Current vs. Collector to Emitter Voltage
10 Ie = 1 mW/cm2 1 Ie = 0.5 mW/cm2 Ie = 0.2 mW/cm2 0.1 Ie = 0.1 mW/cm2
1
0.01
Normalized to: VCE = 5 V Ie = 0.5 mW/cm2 TA = 25C 1 10
0.1
-40
-20
0
20
40
60
80
100
0.001 0.1
TA - AMBIENT TEMPERATURE (C)
VCE - COLLECTOR - EMITTER VOLTAGE (V)
Fig. 5 Dark Current vs. Ambient Temperature
ID - NORMALIZED DARK CURRENT
103 Normalized to: VCE = 25 V TA = 25C
10
2
VCE = 25 V
101
VCE = 10 V
100
10
-1
40
60
80
100
TA - AMBIENT TEMPERATURE (C)
3 QSE213C/QSE214C Rev. 1.0.0
www.fairchildsemi.com
QSE213C/QSE214C Plastic Silicon Infrared Phototransistor
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM EnSignaTM ImpliedDisconnectTM FACTTM IntelliMAXTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM
DISCLAIMER
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM
PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3
SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDiS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I18
4 QSE213C/QSE214C Rev. 1.0.0
www.fairchildsemi.com


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